sot23 npn silicon planar darlington transistors issue 3 ? september 1995 j features *high v ceo * low saturation voltage complementary types ? BCV27 ? bcv28 bcv47 ? bcv48 partmarking details ? BCV27 ? zff bcv47 ? zfg absolute maximum ratings. parameter symbol BCV27 bcv47 unit collector-base voltage v cbo 40 80 v collector-emitter voltage v ceo 30 60 v emitter-base voltage v ebo 10 v peak pulse current i cm 800 ma continuous collector current i c 500 ma base current i b 100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol BCV27 bcv47 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo 40 80 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 30 60 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 10 v i e =10 m a collector cut-off current i cbo 100 10 100 10 na na m a m a v cb = 30v v cb = 60v v cb =30v,t amb =150 o c v cb =60v,t amb =150 o c emitter base cut-off current i ebo 100 100 na v eb =4v collector-emitter saturation voltage v ce(sat) 1.0 1.0 v i c =100ma,i b =0.1ma* base-emitter saturation voltage v be(sat) 1.5 1.5 v i c =100ma,i b =0.1ma* static forward current transfer ratio h fe 4k 10k 20k 4k 2k 4k 10k 2k i c =100 m a, v ce =1v? i c =10ma, v ce =5v* i c =100ma, v ce =5v* i c =500ma, v ce =5v* transition frequency f t 170 typical 170 typical mhz i c =50ma, v ce =5v f = 20mhz output capacitance c obo 3.5 typical 3.5 typical pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ? periodic sample test only. for typical graphs see fmmt38a datasheet BCV27 bcv47 c b e sot23 3 - 22 BCV27 is obsolete please use mmbt6427 bcv47 is currently active
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